Infineon FF450R33T3E3BPSA1 IGBTシリコンモジュール 3300 V、450 A デュアルIGBTモジュール

Technology: Si

Unit Weight: 700 g

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 1 MW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 3.3 kV

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 450 A