Infineon FP35R12W2T7BPSA1 IGBTシリコンモジュール 1200 V, 35 A PIM IGBTモジュール

Technology: Si

Configuration: 3-Phase Inverter

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 35 A