Infineon FS800R07A2E3_B31 ハイブリッドIGBTモジュール ハイブリッドパック2

Technology: Si

Unit Weight: 308 mg

Configuration: 6-Pack

Mounting Style: Through Hole

Pd - Power Dissipation: 1.55 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.4 V

Continuous Collector Current at 25 C: 800 A