Infineon IPL60R095CFD7AUMA1 MOSFETs ハイパワー_NEW

Fall Time: 5.7 ns

Rise Time: 14.5 ns

Technology: Si

Unit Weight: 187.650 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 51 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 147 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 37 ns

Typical Turn-Off Delay Time: 127 ns

Id - Continuous Drain Current: 25 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 95 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V