Infineon S29GL01GT11FHIV40 フラッシュメモリ

Density: 1 Gbit

Package: 64FBGA

Mounting: Surface Mount

Rad Hard: No

Cell Type: NOR

Pin Count: 64

Boot Block: Yes

Interfaces: Parallel

Access Time: 110 ns

IC Mounting: Surface Mount

No. of Pins: 64

Timing Type: Synchronous

Architecture: Sectored

Organization: 128M x 8bit|64M x 16bit

Interface Type: Parallel

Memory Density: 1 Gbit

OE Access Time: 35 ns

Number of Words: 128|64 MWords

Program Current: 45 mA

Screening Level: Industrial

Supplier Package: FBGA

Address Bus Width: 26 Bit

Flash Memory Type: NOR

Page Read Current: 9 mA

Block Organization: Symmetrical

Maximum Erase Time: 3584/Chip s

Product Dimensions: 13 x 11 x 1 mm

Supply Voltage Max: 3.6 V

Supply Voltage Min: 2.7 V

Supply Voltage Nom: 3.3 V

Programming Voltage: 2.7 to 3.6 V

Memory Configuration: 128M x 8bit, 64M x 16bit

Operating Temperature: -40 to 85 °C

Location Of Boot Block: Bottom|Top

Number of Bits per Word: 8|16 Bit

Maximum Page Access Time: 25 ns

Maximum Programming Time: 0.75/Word ms

Maximum Operating Current: 60 mA

Operating Temperature Max: 85 °C

Operating Temperature Min: -40 °C

Maximum Random Access Time: 110 ns

Simultaneous Read/Write Support: No

Maximum Operating Supply Voltage: 3.6 V

Minimum Operating Supply Voltage: 2.7 V

Typical Operating Supply Voltage: 3.3 V

Erase Suspend/Resume Modes Support: Yes

Datasheet