Infineon S29GL064S80DHV020 フラッシュメモリ

Density: 64 Mbit

Package: 64FBGA

Mounting: Surface Mount

Rad Hard: No

Cell Type: NOR

MSL Level: MSL 3 - 168 hours

Pin Count: 64

Boot Block: No

Interfaces: Parallel

Access Time: 80 ns

ECC Support: No

Lead Finish: Tin-Silver-Copper

No. of Pins: 64

Architecture: Sectored

Interface Type: Parallel

Memory Density: 64 Mbit

OE Access Time: 15 ns

Number of Words: 8, 4 MWords

Program Current: 60 mA

Screening Level: Extended Industrial

Supplier Package: FBGA

Address Bus Width: 23, 22 Bit

Page Read Current: 20 mA

Block Organization: Symmetrical

Maximum Erase Time: 65.4/Chip s

Product Dimensions: 9 x 9 x 1(Max

Supply Voltage Nom: 3 V

Max Processing Temp: 260

Programming Voltage: 2.7 to 3.6 V

Operating Temperature: -40 to 105 °C

Number of Bits per Word: 8, 16 Bit

Maximum Page Access Time: 15 ns

Maximum Programming Time: 13110(Typ)/Chip ms

Maximum Operating Current: 50 mA

Operating Temperature Max: 105 °C

Operating Temperature Min: -40 °C

Maximum Random Access Time: 80 ns

Simultaneous Read/Write Support: No

Typical Operating Supply Voltage: 3.0000 V

Erase Suspend/Resume Modes Support: Yes

Datasheet