Infineon S29GL512S10FAI010 フラッシュメモリ

Density: 512 Mbit

Package: 64FBGA

Mounting: Surface Mount

Rad Hard: No

Cell Type: NOR

MSL Level: MSL 3 - 168 hours

Pin Count: 64

Boot Block: Yes

Access Time: 100 ns

ECC Support: No

Lead Finish: Tin-Lead

No. of Pins: 64

Architecture: Sectored

Interface Type: Parallel

Memory Density: 512 Mbit

OE Access Time: 25 ns

Number of Words: 32 MWords

Program Current: 100 mA

Screening Level: Industrial

Supplier Package: FBGA

Address Bus Width: 25 Bit

Page Read Current: 25 mA

Block Organization: Symmetrical

Maximum Erase Time: 1.1/Sector s

Product Dimensions: 13 x 11 x 1(Max)

Supply Voltage Max: 3.6 V

Supply Voltage Min: 2.7 V

Supply Voltage Nom: 3 V

Programming Voltage: 2.7 to 3.6 V

Operating Temperature: -40 to 85 °C

Location Of Boot Block: Bottom|Top

Number of Bits per Word: 16 Bit

Maximum Page Access Time: 15 ns

Maximum Programming Time: 192/Sector ms

Maximum Operating Current: 60 mA

Operating Temperature Max: 85 °C

Operating Temperature Min: -40 °C

Maximum Random Access Time: 100 ns

Simultaneous Read/Write Support: No

Typical Operating Supply Voltage: 3.0000 V

Erase Suspend/Resume Modes Support: Yes

Datasheet