IXYS IXFX98N50P3 MOSFETs 500V 98A 0.05オーム PolarP3 パワーMOSFET

Fall Time: 6 ns

Rise Time: 8 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 197 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.3 kW

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 98 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 96 S, 58 S

Rds On - Drain-Source Resistance: 50 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 5 V