IXYS IXTA4N80P MOSFETs 3.5アンペア 800V 3 Rds

Width: 9.2 mm

Height: 4.5 mm

Length: 9.9 mm

Fall Time: 29 ns

Rise Time: 24 ns

Technology: Si

Unit Weight: 1.600 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 14.2 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 22 ns

Typical Turn-Off Delay Time: 60 ns

Id - Continuous Drain Current: 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 3 Ohms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 5.5 V