IXYS IXTP1R6N50D2 MOSFETs N-CH MOSFETS (D2) 500V 1.6A

Fall Time: 41 ns

Rise Time: 70 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Depletion

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 23.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 1.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.75 S

Rds On - Drain-Source Resistance: 2.3 Ohms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V