IXYS IXTQ3N150M 高電圧 TO3P 1.5KV 3A N-CH HIVOLT

Fall Time: 25 ns

Rise Time: 21 ns

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 73 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 19 ns

Typical Turn-Off Delay Time: 42 ns

Id - Continuous Drain Current: 1.83 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 7.3 Ohms

Vds - Drain-Source Breakdown Voltage: 1.5 kV

Vgs th - Gate-Source Threshold Voltage: 2.5 V