Microchip Technology 2N3636 BJTs - バイポーラトランジスタ 175V 1A 1W 小信号BJT THT

Technology: Si

Unit Weight: 5.835 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 150 at 50 mA, 10 VDC

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 175 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50 at 50 mA, 10 VDC

Collector- Emitter Voltage VCEO Max: 175 V

Collector-Emitter Saturation Voltage: 300 mV