Microchip Technology APT54GA60B IGBTトランジスタ IGBT PT MOS 8 シングル 600 V 54 A TO-247

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 416 W

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 96 A