Microchip Technology APT75GP120B2G IGBTトランジスタ IGBT PT MOS 7 シングル 1200 V 75 A TO-247 MAX

Width: 16.26 mm

Height: 5.31 mm

Length: 21.46 mm

Technology: Si

Unit Weight: 16.466 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 1.042 kW

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 100 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 100 A

Collector-Emitter Saturation Voltage: 3.3 V

Continuous Collector Current at 25 C: 100 A