Microchip Technology DN2535N5-G MOSFET 350V 25オーム

Width: 4.83 mm

Height: 9.02 mm

Length: 10.67 mm

Fall Time: 20 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Depletion

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 15 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 325 mS

Rds On - Drain-Source Resistance: 25 Ohms

Vds - Drain-Source Breakdown Voltage: 350 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V