Microchip Technology DRF1201 MOSFETゲートドライバー RF MOSFET（VDMOS）ドライバー ハイブリッド 1000 V 1000 W 30 MHz T2B

Width: 1 mm

Height: 0.3 mm

Length: 1.5 mm

Fall Time: 2.5 ns

Rise Time: 2.5 ns

Technology: Si

Unit Weight: 25.212 g

Configuration: Inverting, Non-Inverting

Output Current: 8 A

Number of Drivers: 1 Driver

Number of Outputs: 1 Output

Supply Voltage - Max: 15 V

Supply Voltage - Min: 10 V

Pd - Power Dissipation: 1.1 mW

Propagation Delay - Max: 35 ns

Operating Supply Voltage: 10 V to 15 V

Maximum Operating Temperature: + 175 C

Rds On - Drain-Source Resistance: 550 mOhms