Microchip Technology MSCSM120DDUM16TBL3NG デュアルコモンソースSiC MOSFETパワーモジュール PM-MOSFET-SIC-BL3

Fall Time: 25 ns

Rise Time: 30 ns

Technology: SiC

Configuration: Dual Common Source

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Pd - Power Dissipation: 560 W

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 50 ns

Id - Continuous Drain Current: 150 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 16 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V