Micron MT28EW01GABA1HJS-0AAT フラッシュメモリ

Density: 1 Gbit

Package: 56TSOP

Mounting: Surface Mount

Rad Hard: No

Cell Type: NOR

Pin Count: 56

Boot Block: No

Access Time: 105 ns

ECC Support: No

Lead Finish: Matte Tin

No. of Pins: 56

Architecture: Sectored

Interface Type: Parallel

Memory Density: 1 Gbit

OE Access Time: 25 ns

Number of Words: 128, 64 MWords

Program Current: 50 mA

Screening Level: Automotive

Address Bus Width: 27, 26 Bit

Page Read Current: 16 mA

Block Organization: Symmetrical

Maximum Erase Time: 1.1/Block s

Product Dimensions: 14 x 18.4 x 1

Supply Voltage Max: 3.6 V

Supply Voltage Min: 2.7 V

Supply Voltage Nom: 3 V

Max Processing Temp: 260

Programming Voltage: 2.7 to 3.6 V

Operating Temperature: -40 to 105 °C

Number of Bits per Word: 8, 16 Bit

Maximum Page Access Time: 25 ns

Maximum Programming Time: 0.2/Byte ms

Maximum Operating Current: 31 mA

Operating Temperature Max: 105 °C

Operating Temperature Min: -40 °C

Maximum Random Access Time: 105 ns

Simultaneous Read/Write Support: No

Maximum Operating Supply Voltage: 3.6 V

Typical Operating Supply Voltage: 3.0000 V

Erase Suspend/Resume Modes Support: Yes

Datasheet