Micron MT29E256G08CECCBH6-6ES:C フラッシュメモリ

Density: 256 Gbit

Package: 152VBGA

Mounting: Surface Mount

Rad Hard: No

Cell Type: MLC NAND

Pin Count: 152

Boot Block: No

Access Time: 20 ns

ECC Support: Yes

Lead Finish: Tin-Silver-Copper

No. of Pins: 152

Architecture: Sectored

Interface Type: Parallel

Memory Density: 256 Gbit

Number of Words: 32 Gwords

Program Current: 50 mA

Screening Level: Commercial

Supplier Package: VBGA

Block Organization: Symmetrical

Maximum Erase Time: 0.025/Block s

Product Dimensions: 14 x 18 x 0.65 mm

Supply Voltage Max: 3.6 V

Supply Voltage Min: 2.7 V

Supply Voltage Nom: 3.3 V

Clock Frequency Max: 333 MHz

Max Processing Temp: 260 °C

Operating Temperature: 0 to 70 °C

Number of Bits per Word: 8 Bit

Maximum Programming Time: 3.7/Page ms

Maximum Operating Current: 50 mA

Operating Temperature Max: 70 °C

Operating Temperature Min: 0 °C

Maximum Random Access Time: 20 ns

Simultaneous Read/Write Support: No

Typical Operating Supply Voltage: 3.3000 V

Erase Suspend/Resume Modes Support: Yes