Microsemi Jantxv2N6277 BJTs - バイポーラトランジスタ 150V 50A NPN パワーBJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 250 W

DC Current Gain hFE Max: 120

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 180 V

Continuous Collector Current: 50 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 3 V