Nexperia BSH205G2R MOSFETs BSH205G2/SOT23/TO-236AB

Fall Time: 16 ns

Rise Time: 14 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel Trench MOSFET

Qg - Gate Charge: 6.5 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 890 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 43 ns

Id - Continuous Drain Current: 2.3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 170 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 450 mV