NXP BFU530VL RFバイポーラトランジスタ NPN ワイドバンドシリコンRFトランジスタ

Technology: Si

Unit Weight: 9 mg

Output Power: 10 dBm

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar Wideband

Operating Frequency: 11 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 450 mW

Emitter- Base Voltage VEBO: 2 V

Continuous Collector Current: 40 mA

Maximum DC Collector Current: 65 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 12 V