Rectron RM5N800IP MOSFETs TO-251 MOSFET

Fall Time: 9 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 340 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 22 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 81 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 7 ns

Typical Turn-Off Delay Time: 70 ns

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5.5 S

Rds On - Drain-Source Resistance: 1.2 Ohms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V