Renesas Electronics 2SK1835-E MOSFETs NCH パワーMOSFET 1500V 4A 7000MOHM TO-3P

Width: mm

Height: mm

Length: mm

Technology: Si

Unit Weight: 1.600 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 125 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 7 Ohms

Vds - Drain-Source Breakdown Voltage: 1.5 kV

Vgs th - Gate-Source Threshold Voltage: 2 V