Renesas Electronics AT25XE512C-XMHN-B フラッシュメモリ

Density: 512 Kb

Package: 8TSSOP

Mounting: Surface Mount

Rad Hard: 0

Boot Block: No

Access Time: 8 ns

ECC Support: No

No. of Pins: 8

Architecture: Sectored

Interface Type: Serial-SPI

Memory Density: 512 Kb

Number of Words: 512 kWords

Program Current: 13 mA

Screening Level: Industrial

Block Organization: Symmetrical

Maximum Erase Time: 1.1/Chip s

Supply Voltage Max: 3.6 V

Supply Voltage Min: 1.65 V

Supply Voltage Nom: 3, 2.5 V

Clock Frequency Max: 104 MHz

Operating Temperature: -40 to 85 °C

Number of Bits per Word: 1 Bit

Maximum Programming Time: 3/Page ms

Maximum Operating Current: 7 mA

Operating Temperature Max: 85 °C

Operating Temperature Min: -40 °C

Maximum Random Access Time: 8 ns

Simultaneous Read/Write Support: No

Typical Operating Supply Voltage: 1.8, 2.5, 3.3 V

Erase Suspend/Resume Modes Support: No

Datasheet