Renesas Electronics HIP6602BCB-T ハイサイドおよびローサイド

Type: High and Low Side

Gate type: NChannelMOSFET

Input type: Non-inverted

Channel Fit: Synchronization

Constitution: Half Bridge

Mounting Type: Surface Mount

Rise/Fall Time: 20|20ns

Supply voltage: 10.8 to 13.2V

Bootstrap Voltage: 15V

Number of drivers: 4

Power-supply voltage: 12V

Operating temperature: 00 to 125C

Maximum output current: 730mA

Number of poles of the contact point: 14