Renesas Electronics N0436N-ZK-E1-AY MOSFETs MOSFET

Width: 6.1 mm

Height: 2.3 mm

Length: 6.5 mm

Fall Time: 10 ns

Rise Time: 12 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 62 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 23 ns

Typical Turn-Off Delay Time: 51 ns

Id - Continuous Drain Current: 56 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 49 S

Rds On - Drain-Source Resistance: 4.7 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 4 V