Renesas Electronics NP50P06SDG-E1-AY MOSFETs パワー TRS2 自動車用 MOS MP-3ZK UMOS4 O

Width: 6.1 mm

Height: 2.65 mm

Length: 6.5 mm

Fall Time: 180 ns

Rise Time: 13 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 405 ns

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 16.5 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V