Renesas Electronics NP75P04YLG-E1-AY MOSFETs 自動車用 MOS 8P HSON（シングル）UMOS4

Width: 5 mm

Height: 1.45 mm

Length: 5.4 mm

Fall Time: 180 ns

Rise Time: 11 ns

Technology: Si

Unit Weight: 771.020 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 91 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 138 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 320 ns

Id - Continuous Drain Current: 75 A

Maximum Operating Temperature: + 175 C

Forward Transconductance - Min: 31 S

Rds On - Drain-Source Resistance: 9.7 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V