Renesas Electronics PS2561DL-1Y-A トランジスタ出力フォトカプラ BV=5000Vr.m.s 1チャンネル

Width: mm

Height: mm

Length: mm

Fall Time: 5 us

Rise Time: 3 us

Output Type: NPN Phototransistor

Unit Weight: 262.631 mg

Mounting Style: SMD/SMT

Isolation Voltage: 5000 Vrms

Number of Channels: 1 Channel

If - Forward Current: 40 mA

Vf - Forward Voltage: 1.4 V

Vr - Reverse Voltage: 6 V

Current Transfer Ratio: 50 %

Pd - Power Dissipation: 150 mW

Maximum Collector Current: 50 mA

Current Transfer Ratio - Max: 400 %

Current Transfer Ratio - Min: 50 %

Maximum Operating Temperature: + 110 C

Minimum Operating Temperature: - 55 C

Maximum Collector Emitter Voltage: 80 V

Maximum Collector Emitter Saturation Voltage: 300 mV