ROHM Semiconductor HP8K24TB MOSFETs HP8K24は高信頼性トランジスタであり、スイッチングおよびDC-DCコンバータに適しています。

Fall Time: 3.4 ns, 19 ns

Rise Time: 4.5 ns, 12 ns

Technology: Si

Unit Weight: 771.020 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 10 nC, 36 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 22 W, 31 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9.6 ns, 20 ns

Typical Turn-Off Delay Time: 25.5 ns, 59 ns

Id - Continuous Drain Current: 27 A, 80 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 10 S, 27 S

Rds On - Drain-Source Resistance: 8.8 mOhms, 3 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V