ROHM Semiconductor HS8K1TB MOSFETs HSML3030L N CHAN 30V

Fall Time: 2.9 ns, 3.2 ns

Rise Time: 4.5 ns, 5.2 ns

Technology: Si

Unit Weight: 50.585 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 6 nC, 7.4 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8.2 ns, 8.4 ns

Typical Turn-Off Delay Time: 19.2 ns, 19.7 ns

Id - Continuous Drain Current: 10 A, 11 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5 S, 6 S

Rds On - Drain-Source Resistance: 11.8 mOhms, 14.6 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V