ROHM Semiconductor R5205PND3FRATL MOSFETs TO252 525V 5A N-CH

Fall Time: 20 ns

Rise Time: 25 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 10.8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 65 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 40 ns

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.6 Ohms

Vds - Drain-Source Breakdown Voltage: 525 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V