ROHM Semiconductor R6030JNXC7G MOSFETs 600V Vdss; 95W Pd PrestoMOS; 30A

Fall Time: 25 ns

Rise Time: 26 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 74 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 95 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 37 ns

Typical Turn-Off Delay Time: 70 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 143 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 7 V