ROHM Semiconductor RSM002N06T2L MOSFETs トランス MOSFET N-CH 60V 0.25A

Fall Time: 28 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 1.500 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3.5 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 250 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 250 mS

Rds On - Drain-Source Resistance: 2.4 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.3 V