ROHM Semiconductor SP8M6HZGTB MOSFETs AECQ

Fall Time: 5 ns, 10 ns

Rise Time: 8 ns, 15 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 3.9 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6 ns, 10 ns

Typical Turn-Off Delay Time: 22 ns, 35 ns

Id - Continuous Drain Current: 5 A, 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.8 S, 3 S

Rds On - Drain-Source Resistance: 51 mOhms, 90 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V, 2.5 V