ROHM Semiconductor UMT1NFHATN BJTs - バイポーラトランジスタ PNP+PNP 汎用増幅トランジスタ（AEC-Q101対応）

Technology: Si

Unit Weight: 29.711 mg

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 560 at - 1 mA, - 6 V

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: - 150 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at - 1 mA, - 6 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 500 mV