ROHM Semiconductor US6X6TR BJTs - バイポーラトランジスタ NPN バイポーラ 30V 1.5A

Width: 1.7 mm

Height: 0.77 mm

Length: 2 mm

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 400 mW

DC Current Gain hFE Max: 680 at 100 mA, 2 V

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 270 at 100 mA, 2 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 350 mV