ROHM Semiconductor VT6J1T2CR MOSFETs 1.2V ドライブ Pch+Pch MOSFET

Fall Time: 137 ns

Rise Time: 62 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 150 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 46 ns

Typical Turn-Off Delay Time: 325 ns

Id - Continuous Drain Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 120 mS

Rds On - Drain-Source Resistance: 3.8 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V