SemiQ GCMS020A120S1-E1 シリコンカーバイド（SiC）モジュール SiC MOSFET/SBDモジュール SOT-227 コパック 1200V 20 mohm

Fall Time: 35 ns

Rise Time: 53 ns

Technology: SiC

REACH - SVHC: Details

Mounting Style: Screw Mount

Transistor Polarity: N-Channel and SBD

Vf - Forward Voltage: 1.54 V

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 640 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 27 ns

Id - Continuous Drain Current: 120 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 20 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2 V