SemiQ GCMX005A120B3B1P ハーフブリッジSiC 1200V 5mΩ MOSFET ハーフブリッジモジュール

Fall Time: 29 ns

Rise Time: 22 ns

Technology: SiC

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.154 kW

Vgs - Gate-Source Voltage: - 5 V, + 20 V

Typical Turn-On Delay Time: 51 ns

Typical Turn-Off Delay Time: 114 ns

Id - Continuous Drain Current: 383 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 4.4 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V