STMicroelectronics BUF420AW BJTs - バイポーラトランジスタ NPN 高電圧パワー

Width: 5.15 mm

Height: 20.15 mm

Length: 15.75 mm

Technology: Si

Unit Weight: 6.500 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 200 W

Emitter- Base Voltage VEBO: 7 V

Continuous Collector Current: 30 A

Maximum DC Collector Current: 30 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 450 V

Collector-Emitter Saturation Voltage: 800 mV