STMicroelectronics BUL743 BJTs - バイポーラトランジスタ H VL 高速スイッチング

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 100 W

DC Current Gain hFE Max: 80

Emitter- Base Voltage VEBO: 19 V

Continuous Collector Current: 12 A

Maximum DC Collector Current: 12 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 24

Collector- Emitter Voltage VCEO Max: 500 V

Collector-Emitter Saturation Voltage: 600 mV