STMicroelectronics D44H8 BJTs - バイポーラトランジスタ Gen 低電圧 PWR 60V Vceo 10A Ic

Width: 4.6 mm

Height: 9.15 mm

Length: 10.4 mm

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 50 W

DC Current Gain hFE Max: 60

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: 10 A

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1 V