STMicroelectronics HD1750FX BJTs - バイポーラトランジスタ NPN 高電圧 +800Vceo 最大

Width: 5.7 mm

Height: 16.5 mm

Length: 15.7 mm

Technology: Si

Unit Weight: 8.437 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 75 W

Emitter- Base Voltage VEBO: 10 V

Maximum DC Collector Current: 24 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 800 V

Collector-Emitter Saturation Voltage: 3 V