STMicroelectronics MD1802FX BJTs - バイポーラトランジスタ NPN パワートランジスタ

Width: 15.7 mm

Height: 14.7 mm

Length: 26.7 mm

Technology: Si

Unit Weight: 5.200 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 57 W

DC Current Gain hFE Max: 8.5

Emitter- Base Voltage VEBO: 9 V

Continuous Collector Current: 10 A

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 5.5 at 5 A, 5 V

Collector- Emitter Voltage VCEO Max: 700 V

Collector-Emitter Saturation Voltage: 1.5 V