STMicroelectronics PD85035STR-E RFパワーMOSFET パワーR.F. Nチャネルトランジスタ

Gain: 14.9 dB

Width: 9.4 mm

Height: 3.5 mm

Length: 7.5 mm

Technology: Si

Unit Weight: 3 g

Channel Mode: Enhancement

Output Power: 35 W

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Operating Frequency: 1 GHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 95 W

Vgs - Gate-Source Voltage: + 15 V

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Vds - Drain-Source Breakdown Voltage: 40 V