STMicroelectronics STD11NM65N MOSFETs Nチャネル 650V 0.425オーム 11A パワー MDMesh II

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 29 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 110 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Id - Continuous Drain Current: 11 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 425 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2 V