STMicroelectronics STD127DT4 BJTs - バイポーラトランジスタ 高電圧高速スイッチ NPN パワートランジスタ

Technology: Si

Unit Weight: 350 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 35 W

DC Current Gain hFE Max: 40

Emitter- Base Voltage VEBO: 9 V

Continuous Collector Current: 4 A

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 5

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 1.3 V