STMicroelectronics STD3NK80ZT4 MOSFET Nチャネル 800ボルト 2.5A ゼナーダイオード SuperMESH

Width: 6.2 mm

Height: 2.4 mm

Length: 6.6 mm

Fall Time: 40 ns

Rise Time: 27 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel Power MOSFET

Qg - Gate Charge: 19 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 70 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 36 ns

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4.5 Ohms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 3 V